mar 201 6 version 1. 2 magnachip semiconductor ltd . 1 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 6 00 v gate - source voltage v gss 30 v continuous drain current ( ) t c =25 o c i d 11 a t c =100 o c 6.9 a pulsed drain current (1) i dm 44 a power dissipation t c =25 o c p d 49 w derate above 25 o c 0.39 w/ o c peak diode recovery dv/dt (3) dv/dt 4.5 v/ns single pulse avalanche energy (4) e as 720 mj junction and storage temperature range t j , t stg - 55~150 o c id limited by maximum junction temperature thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 62.5 o c/w thermal resistance, junction - to - case (1 ) r jc 2.55 md f s 1 1 n 6 0 n - channel mosfet 6 00 v, 1 1 a, 0. 5 5 ? general description the md f s 1 1 n 6 0 uses advanced magna ch ips mosfet features ? ds = 6 00 v ? d = 1 1 a @ v gs = 10v ? ds(on) gs = 10v applications ? ? ? g s to - 220ft
mar 201 6 version 1. 2 magnachip semiconductor ltd . 2 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v ordering information p art number temp. range package packing rohs status mdf s 11 n 6 0th - 55~150 o c to - 220f t tube halogen free electrical characteristics (ta = 25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 3.0 - 5.0 drain cut - off current i dss v ds = 6 00v, v gs = 0v - - 1 a gate leakage current i gss v gs = 30v, v ds = 0v - - 100 na drain - source on resistance r ds(on) v gs = 10v, i d = 5.5a - 0.45 0.55 forward transconductance g fs v ds = 30v, i d = 5.5a - 13 - s dynamic characteristics total gate charge q g v ds = 480v, i d = 11a, v gs = 10v - 38.4 - nc gate - source charge q gs - 11.2 - gate - drain charge q gd - 14 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 1700 - pf reverse transfer capacitance c rss - 6.2 - output capacitance c oss - 184 - turn - on delay time t d(on) v gs = 10v, v ds = 300v, i d = 11a, r g = 25 - 38 - ns rise time t r - 50 - turn - off delay time t d(off) - 76 - fall time t f - 33 - drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 11 - a source - drain diode forward voltage v sd i s = 1 1 a , v gs = 0v - - 1. 4 v body diode reverse recovery time t rr i f = 11 a , dl/dt = 100a/s - 430 - ns body diode reverse recovery charge q rr - 4.0 - c note : 1. p ulse width is based on r j c & r j a and the maximum allowed junction temperature of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature t j(max) =150 c. 3. i s d 1 1 a , di/dt 200a/us, v dd =50v, r g =25 , starting t j =25 c 4. l= 10.9 mh, i as = 1 1 a , v dd =50v, r g =25 , starting t j =25 c
mar 201 6 version 1. 2 magnachip semiconductor ltd . 3 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 5 10 15 20 25 5 10 15 20 25 30 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. 250 ? s pulse test bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 2 4 6 8 10 0.1 1 10 -55 * notes ; 1. v ds =30v 150 25 i d [a] v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 25 150 notes : 1. v gs = 0 v 2. i d = 250 ? i dr reverse drain current [a] v sd , source-drain voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
mar 201 6 version 1. 2 magnachip semiconductor ltd . 4 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area fig. 10 maximum drain current v s. case temperature fig. 11 transient thermal response curve fig .12 single pulse maximum power dissipation 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1s 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 single pulse r thjc = 2.55 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =2.55 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 0 2 4 6 8 10 120v 300v 480v note : i d = 11a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
mar 201 6 version 1. 2 magnachip semiconductor ltd . 5 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v physical dimensions 3 leads , to - 220f t note: pkg body sizes exclude mold flash & gate burrs [unit:mm] e d l r f a g q c l1 2 x e 3 x b 3 x b1 q1
mar 201 6 version 1. 2 magnachip semiconductor ltd . 6 md f s 1 1 n 6 0 n - channel mosfet 6 0 0 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such application s do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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